Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one of its ports connected to the energy storage element (Lithium-Ion battery), is tested and analyzed. By swapping the switching frequency of the device, a significant efficiency improvement can be observed by SiC power devices. Experimental results indicated that an efficiency increment of around 2% can be brought by SiC MOSFET. Moreover, the batte...
Abstract — A high-voltage silicon-carbide (SiC) power MOSFET was evaluated on two high-power factor ...
Modern switching components for energy processing widely consist of active semiconductor devices in ...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, a...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
Due to its superior electrical characteristics resultant from material properties such as high criti...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potentia...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
Space and weight are critical factors for offshore wind applications during the construction, operat...
Silicon-based MOSFETs and IGBTs have long been the premiere options for semiconductor switches in po...
none4siThe charging process is one of the main factors for the widespread dissemination of electric ...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Semiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling t...
Power electronic inverters and converters are an essential technology in the battery management and ...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...
Abstract — A high-voltage silicon-carbide (SiC) power MOSFET was evaluated on two high-power factor ...
Modern switching components for energy processing widely consist of active semiconductor devices in ...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, a...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
Due to its superior electrical characteristics resultant from material properties such as high criti...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potentia...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
Space and weight are critical factors for offshore wind applications during the construction, operat...
Silicon-based MOSFETs and IGBTs have long been the premiere options for semiconductor switches in po...
none4siThe charging process is one of the main factors for the widespread dissemination of electric ...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Semiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling t...
Power electronic inverters and converters are an essential technology in the battery management and ...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...
Abstract — A high-voltage silicon-carbide (SiC) power MOSFET was evaluated on two high-power factor ...
Modern switching components for energy processing widely consist of active semiconductor devices in ...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...