Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform
- Graaf, Jasper de
- Zhao, Xinran
- Konstantinou, Dimitrios
- van den Hout, Menno
- Reniers, Sander
- Shen, Longfei
- van der Heide, Sjoerd
- Rommel, Simon
- Tafur Monroy, Idelfonso
- Okonkwo, Chigo M.
- Cao, Zizheng
- Koonen, Ton
- Williams, Kevin
- Jiao, Yuqing
Publication date
March 2022
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD
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