Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitax
International audienceAbstract We elaborated a technique of pulsed laser ablation in gas mixtures (H...
The silicon-based electroluminescent devices are most commonly used in recent years, especially in o...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitax
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...
Photoluminescence (PL) has gain popularity as a very important characterization technique for the fa...
Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals ...
Silicon is the most studied electronic material known to man and dominates the electronics industry ...
Conferencia presentada en la VIII International Conference on Surfaces Materials and Vacuum (d...
In this study, silicon nanostructures were synthesized by layer-by-layer (LBL) method using the radi...
International audienceWe present results on the photoluminescence PL properties of silicon nanocryst...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX180535 / BLDSC - British Library D...
National audienceThe photoluminescence properties of silicon nanoparticles ''Si NPs'' have their app...
Measurements executed at 300 K revealed photoluminescence solely from silicon. However, at 93 K the ...
International audienceAbstract We elaborated a technique of pulsed laser ablation in gas mixtures (H...
The silicon-based electroluminescent devices are most commonly used in recent years, especially in o...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitax
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...
Photoluminescence (PL) has gain popularity as a very important characterization technique for the fa...
Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals ...
Silicon is the most studied electronic material known to man and dominates the electronics industry ...
Conferencia presentada en la VIII International Conference on Surfaces Materials and Vacuum (d...
In this study, silicon nanostructures were synthesized by layer-by-layer (LBL) method using the radi...
International audienceWe present results on the photoluminescence PL properties of silicon nanocryst...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX180535 / BLDSC - British Library D...
National audienceThe photoluminescence properties of silicon nanoparticles ''Si NPs'' have their app...
Measurements executed at 300 K revealed photoluminescence solely from silicon. However, at 93 K the ...
International audienceAbstract We elaborated a technique of pulsed laser ablation in gas mixtures (H...
The silicon-based electroluminescent devices are most commonly used in recent years, especially in o...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
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