As the device feature size shrinks, the dissipation of power increases and further raises the carrier and lattice temperature, which finally affects device performance. In this paper, we analyze the comprehensive influence of the self-heating effect and hot carrier injection (HCI) using TCAD simulations. Based on the hydrodynamic and thermodynamic models, it is demonstrated that the thermal surface resistance had a positive impact on the carrier and lattice temperature and that the drain saturation current is reduced dramatically due to the self-heating effect. Moreover, the impact of HCI on device performance is discussed. Finally, it is concluded that the self-heating effect exacerbates the influence of HCI on device characteristics
This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electroth...
Hot-carrier-injection (HCI) effects are studied in n-channel rugged LDMOS transistors in high curren...
An analytical model is developed to estimate the effect of the scaling of the buried oxide on the he...
Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating the S...
We develop and validate a physics-based modeling framework for coupled hot-carrier degradation (HCD)...
In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple...
Whilemany groups attribute the greatly accelerated (i. e., excess) HCI degradation in modern transis...
In this work, we study the impact of device self heating on Bulk and doublegate si...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
none9The rugged LDMOS transistors showing a current "enhancement" in their high current-voltage regi...
We have studied the impact of thermal contact resistance (TCR) ( Rth ) and within-chip ambient tempe...
[[abstract]]Investigates the effects of self-heating on the high current I -V characteristics of sem...
Various LDMOS device design parameters to mitigate quasi-saturation (QS) have been identified. Based...
In recent times many systems in a wide range of application fields (e.g., health, material science, ...
SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D electrostatic ...
This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electroth...
Hot-carrier-injection (HCI) effects are studied in n-channel rugged LDMOS transistors in high curren...
An analytical model is developed to estimate the effect of the scaling of the buried oxide on the he...
Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating the S...
We develop and validate a physics-based modeling framework for coupled hot-carrier degradation (HCD)...
In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple...
Whilemany groups attribute the greatly accelerated (i. e., excess) HCI degradation in modern transis...
In this work, we study the impact of device self heating on Bulk and doublegate si...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
none9The rugged LDMOS transistors showing a current "enhancement" in their high current-voltage regi...
We have studied the impact of thermal contact resistance (TCR) ( Rth ) and within-chip ambient tempe...
[[abstract]]Investigates the effects of self-heating on the high current I -V characteristics of sem...
Various LDMOS device design parameters to mitigate quasi-saturation (QS) have been identified. Based...
In recent times many systems in a wide range of application fields (e.g., health, material science, ...
SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D electrostatic ...
This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electroth...
Hot-carrier-injection (HCI) effects are studied in n-channel rugged LDMOS transistors in high curren...
An analytical model is developed to estimate the effect of the scaling of the buried oxide on the he...