The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics into models of chemical vapor deposition (CVD) reactors has been a challenge for many years. In this article we review the literature concerning the study of the dynamics of the Si(100)2×1 surface and introduce a multiscale model that captures the main features of its reactivity. The model combines the results of ab initio calculations with an atomistic description of the Si surface, obtained using a 3D-kineticMonte Carlo (KMC)model that explicitly accounts for the 2×1 surface reconstruction and the formation and diffusion of Si dimers on a hydrogenated surface. At the atomistic scale, we determined pre-exponential factors and activation energ...
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH/sub 3/ radicals in SiH...
We present a detailed study of some atomic-scale processes fundamental in understanding Si and Ge t...
AbstractA Monte-Carlo simulation of the growth of hydrogenated amorphous silicon (a-Si:H) thin films...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...
Based on an atomically detailed surface growth model, we have performed kinetic Monte Carlo (KMC) si...
National audienceThe microelectronic industry is in permanent evolution, due to the need of integrat...
International audienceA multi-scale model has been developed in order to represent the nucleation an...
AbstractWe have carried out Kinetic Monte Carlo (KMC) simulations on the epitaxial growth of silicon...
International audienceA modeling study is presented involving calculations at continuum and atomisti...
We report results from a detailed analysis of the fundamental silicon hydride dissociation processes...
We present first results combining models at continuum and atomistic (DFT, Density Functional Theo...
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH/sub 3/ radicals in SiH...
We present a detailed study of some atomic-scale processes fundamental in understanding Si and Ge t...
AbstractA Monte-Carlo simulation of the growth of hydrogenated amorphous silicon (a-Si:H) thin films...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...
Based on an atomically detailed surface growth model, we have performed kinetic Monte Carlo (KMC) si...
National audienceThe microelectronic industry is in permanent evolution, due to the need of integrat...
International audienceA multi-scale model has been developed in order to represent the nucleation an...
AbstractWe have carried out Kinetic Monte Carlo (KMC) simulations on the epitaxial growth of silicon...
International audienceA modeling study is presented involving calculations at continuum and atomisti...
We report results from a detailed analysis of the fundamental silicon hydride dissociation processes...
We present first results combining models at continuum and atomistic (DFT, Density Functional Theo...
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH/sub 3/ radicals in SiH...
We present a detailed study of some atomic-scale processes fundamental in understanding Si and Ge t...
AbstractA Monte-Carlo simulation of the growth of hydrogenated amorphous silicon (a-Si:H) thin films...