In this work, we examine how strain exerted on individual ZnO nanorods (NRs) can influence the fluorescence signals that are emitted from fluorophore molecules and subsequently coupled into and guided along the NR. We elucidate the relationships between the incremental levels of compressive and tensile strain on the NRs and measured fluorescence intensity of a model fluorophore, rhodamine 6G (R6G), as a function of the position on the NRs. We reveal that compressive strain on the NRs leads to a decrease in the guided fluorescence signal, while tensile strain leads to an increase in the fluorescence intensity. Compared to an unstrained state, approximately 35% decrease (increase) in R6G fluorescence intensity was observed from ZnO NRs when t...
Elastic engineering strain has been regarded as a low-cost and continuously variable manner for alte...
Bandgap engineering is a common practice for tuning semiconductors for desired physical properties. ...
The effect of uniaxial tensile strain on individual ZnO nanowires with diameters ranging from 500 nm...
Zinc oxide (ZnO) nanorods (NRs) have been demonstrated as a promising platform for enhanced fluoresc...
Zinc oxide (ZnO) nanorods (NRs) have been demonstrated as a promising platform for enhanced fluoresc...
We conduct systematical cathodoluminescence study on red-shift of near-band-edge emission energy in ...
We report on the anisotropic optical emission of individual ZnO nanorods directly measured by angula...
We report angular dependent microphotoluminescence measurements on individual suspended ZnO nanorods...
A red shift of the exciton of ZnO nanowires is efficiently produced by bending strain, as demonstrat...
The electronic-mechanical coupling in semiconductor nanostructures under different strain loading mo...
Modern field-effect transistors or laser diodes take advantages of band-edge structures engineered b...
Lattice strain is a useful and economic way to tune the device performance and is commonly present i...
ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state ...
The emission properties of bent ZnO microwires with diameters ranging from 1.5 μm to 7.3 μm are sy...
One-dimensional semiconductor can undergo large deformation including stretching and bending. This h...
Elastic engineering strain has been regarded as a low-cost and continuously variable manner for alte...
Bandgap engineering is a common practice for tuning semiconductors for desired physical properties. ...
The effect of uniaxial tensile strain on individual ZnO nanowires with diameters ranging from 500 nm...
Zinc oxide (ZnO) nanorods (NRs) have been demonstrated as a promising platform for enhanced fluoresc...
Zinc oxide (ZnO) nanorods (NRs) have been demonstrated as a promising platform for enhanced fluoresc...
We conduct systematical cathodoluminescence study on red-shift of near-band-edge emission energy in ...
We report on the anisotropic optical emission of individual ZnO nanorods directly measured by angula...
We report angular dependent microphotoluminescence measurements on individual suspended ZnO nanorods...
A red shift of the exciton of ZnO nanowires is efficiently produced by bending strain, as demonstrat...
The electronic-mechanical coupling in semiconductor nanostructures under different strain loading mo...
Modern field-effect transistors or laser diodes take advantages of band-edge structures engineered b...
Lattice strain is a useful and economic way to tune the device performance and is commonly present i...
ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state ...
The emission properties of bent ZnO microwires with diameters ranging from 1.5 μm to 7.3 μm are sy...
One-dimensional semiconductor can undergo large deformation including stretching and bending. This h...
Elastic engineering strain has been regarded as a low-cost and continuously variable manner for alte...
Bandgap engineering is a common practice for tuning semiconductors for desired physical properties. ...
The effect of uniaxial tensile strain on individual ZnO nanowires with diameters ranging from 500 nm...