This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS technology. The LNA consists of two cascode stage and one common-source stage. To achieve a wide bandwidth and low average noise figure, inter-stage peak-gain distribution technique and transformer-based triple-coupled technique are developed. Besides, a new compact T-coil-based network is proposed to neutralize the parasitic capacitors and enlarge the gain. The measure results show that the 3-dB bandwidth is from 19.6 to 39.4 GHz, the maximum gain is 23.5 dB, and the noise figure (NF) is from 3.7 to 5.8 dB. The dc power comsumption is 46 mW with 1V supply voltage. The input P1dB is −17 dBm at 30 GHz
This project present a design of a 5.8 GHz low noise amplifier (LNA) design with cascode and cascade...
This paper presents the design of low noise amplifier with cascode and cascaded techniques using T-...
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presen...
A design of wideband low noise amplifier here can be implemented using T-coil network as a high orde...
Pages 1156 - 1159One essential building block for integrated 60 GHz CMOS radio transceivers is the l...
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for wid...
This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 ...
In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolutio...
This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0....
The design of LNA is critical in overall receiver design, as it is usually placed in the first stage...
A T-coil network can be implemented as a high order filter for bandwidth extension. This technique i...
In this paper, an inductively degenerated CMOS differential low noise amplifier circuit topology is ...
Abstract—A wide-band (10~18GHz) low noise amplifier(LNA) is presented. With transformer feedback in ...
[[abstract]]A 60-GHz-band low-noise amplifier (LNA) using bulk 65-nm CMOS technology is reported. To...
Abstract—A 3–5GHz broadband CMOS single-ended LNA with a new theoretical approach based on least-squ...
This project present a design of a 5.8 GHz low noise amplifier (LNA) design with cascode and cascade...
This paper presents the design of low noise amplifier with cascode and cascaded techniques using T-...
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presen...
A design of wideband low noise amplifier here can be implemented using T-coil network as a high orde...
Pages 1156 - 1159One essential building block for integrated 60 GHz CMOS radio transceivers is the l...
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for wid...
This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 ...
In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolutio...
This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0....
The design of LNA is critical in overall receiver design, as it is usually placed in the first stage...
A T-coil network can be implemented as a high order filter for bandwidth extension. This technique i...
In this paper, an inductively degenerated CMOS differential low noise amplifier circuit topology is ...
Abstract—A wide-band (10~18GHz) low noise amplifier(LNA) is presented. With transformer feedback in ...
[[abstract]]A 60-GHz-band low-noise amplifier (LNA) using bulk 65-nm CMOS technology is reported. To...
Abstract—A 3–5GHz broadband CMOS single-ended LNA with a new theoretical approach based on least-squ...
This project present a design of a 5.8 GHz low noise amplifier (LNA) design with cascode and cascade...
This paper presents the design of low noise amplifier with cascode and cascaded techniques using T-...
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presen...