Analysis of quantum yield in n-channel MOSFETs

New experimental data on the recombination component of the SILC and on the correlation between the excess impact ionization component and the steady-state and transient components of the SILC are provided. By employing structures with triple well, charge-separation experiments are performed directly on nMOSFETs, experimentally showing the existence of a hole SILC in such devices. Experiments are carried out as a function of the annealing time and stress dose, confirming that the excess impact ionization current is not correlated to the SILC, but rather to its transient component. This confirms previous results, showing that the reduction in quantum yield after stress cannot be used to quantitatively assess the energy loss of the SILC electrons