The three-dimensional structure of GaN/(In,Ga)N core-shell nanowires with multi-faceted pencil-shaped apex is analyzed by electron tomography using high-angle annular dark-field mode in a scanning transmission electron microscope. Selective area growth on GaN-on-sapphire templates using a patterned mask is performed by molecular beam epitaxy to obtain ordered arrays of uniform nanowires. Our results of the tomographic reconstruction allow the detailed determination of the complex morphology of the inner (In,Ga)N multi-faceted shell structure and its deviation from the perfect hexagonal symmetry. The tomogram unambiguously identifies a dot-in-a-wire configuration at the nanowire apex including the exact shape and size, as well as the spatial...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applica...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutores...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
As semiconducting nanowires have promising applications for materials science, nanoelectronics and p...
As semiconducting nanowires have promising applications for materials science, nanoelectronics and p...
We review our current progress on semiconductor nanowires of β-Ga2O3, Si and GaN. These nanowires we...
One common goal of sample analysis is to provide structural, compositional, or functional data in or...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applica...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutores...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
As semiconducting nanowires have promising applications for materials science, nanoelectronics and p...
As semiconducting nanowires have promising applications for materials science, nanoelectronics and p...
We review our current progress on semiconductor nanowires of β-Ga2O3, Si and GaN. These nanowires we...
One common goal of sample analysis is to provide structural, compositional, or functional data in or...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
International audienceWhile core-shell wire-based devices offer a promising path toward improved opt...
III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applica...