The formation energies of oxygen vacancies and the migration barriers of oxygen in TiO2 with a rutile structure have been calculated by the projector augmented-wave method within the electron density functional theory. We have derived analytical expressions for the temperature-dependent diffusion coefficients along two crystallographic directions using Landman’s method and calculated the activation energies and the pre-exponential factor. The temperature-dependent diffusion coefficient is shown to be in good agreement with the experiment and with the results obtained previously by the statistical method. The influence of impurities on the diffusion properties of oxygen in the oxide is discussed
We present calculations for Ti adatoms and interstitials at the (110) surface of rutile TiO2, where ...
We performed density-functional calculations of oxygen incorporation and diffusion in layered Ti2AlC...
The diffusion coefficient of oxygen in beta-Ti has been measured by the molten flux method in the te...
Semiconducting properties and related defect disorder for well defined TiO2 single crystal were stud...
The influence of impurity and its concentration on the temperature-dependent diffusion coefficient o...
Analytic expressions for the temperature-dependent diffusion coefficient of oxygen along two directi...
The intrinsic oxygen vacancy (Ov) in TiO2 is a vital topic of semiconductor materials. Here, we use ...
The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measure...
The semiconducting properties of TiO₂ single crystal and their changes during oxidation and reductio...
Point defects are known to affect transport properties of materials. The effect of oxygen vacancies ...
The present work reports the gas/solid equilibration kinetics for In-doped TiO2 (0.4 atom % In) at e...
The structure, energetics, and transport properties of TiO2 anatase with different densities of oxyg...
The oxygen vacancy diffusion in Al2O3 with a corundum structure is investigated by the projector aug...
We report calculations of the electronic structure of a model of TiO2 which contains oxygen vacancie...
The energy levels of the different charge states of an oxygen vacancy and titanium interstitial in r...
We present calculations for Ti adatoms and interstitials at the (110) surface of rutile TiO2, where ...
We performed density-functional calculations of oxygen incorporation and diffusion in layered Ti2AlC...
The diffusion coefficient of oxygen in beta-Ti has been measured by the molten flux method in the te...
Semiconducting properties and related defect disorder for well defined TiO2 single crystal were stud...
The influence of impurity and its concentration on the temperature-dependent diffusion coefficient o...
Analytic expressions for the temperature-dependent diffusion coefficient of oxygen along two directi...
The intrinsic oxygen vacancy (Ov) in TiO2 is a vital topic of semiconductor materials. Here, we use ...
The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measure...
The semiconducting properties of TiO₂ single crystal and their changes during oxidation and reductio...
Point defects are known to affect transport properties of materials. The effect of oxygen vacancies ...
The present work reports the gas/solid equilibration kinetics for In-doped TiO2 (0.4 atom % In) at e...
The structure, energetics, and transport properties of TiO2 anatase with different densities of oxyg...
The oxygen vacancy diffusion in Al2O3 with a corundum structure is investigated by the projector aug...
We report calculations of the electronic structure of a model of TiO2 which contains oxygen vacancie...
The energy levels of the different charge states of an oxygen vacancy and titanium interstitial in r...
We present calculations for Ti adatoms and interstitials at the (110) surface of rutile TiO2, where ...
We performed density-functional calculations of oxygen incorporation and diffusion in layered Ti2AlC...
The diffusion coefficient of oxygen in beta-Ti has been measured by the molten flux method in the te...