The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits. Lateral currents paths and turn-on forward delay are considered into the model. Self-heating effect for both IGBT and diode regions is take into account, enabling reliable electro-thermal analysis. The model is calibrated to fit experimental data of a commercial 20 A-1.2 kV rated device. As a compelling example to prove the effectiveness of the model, the results of an electro-thermal simulation on a quasi-resonant converter are compared with experiments. © 2016 IEEE
Designers of advanced power converters may choose from a variety of switching device models for simu...
In this paper, improved electrothermal models of the power diode and IGBT have been developed. The m...
Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage ...
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed appr...
Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT ...
Abstract: A novel IGBT electrothermal model is implemented for the first time in PSpice for the simu...
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliab...
The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into...
In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT...
compact circuit model for power PiN diode is presented in this paper. The model includes thermal and...
A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide b...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circ...
The thermal analysis and management is an important issue for power semiconductor devices especially...
Designers of advanced power converters may choose from a variety of switching device models for simu...
In this paper, improved electrothermal models of the power diode and IGBT have been developed. The m...
Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage ...
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed appr...
Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT ...
Abstract: A novel IGBT electrothermal model is implemented for the first time in PSpice for the simu...
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliab...
The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into...
In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT...
compact circuit model for power PiN diode is presented in this paper. The model includes thermal and...
A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide b...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circ...
The thermal analysis and management is an important issue for power semiconductor devices especially...
Designers of advanced power converters may choose from a variety of switching device models for simu...
In this paper, improved electrothermal models of the power diode and IGBT have been developed. The m...
Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage ...