A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.ArticleJOURNAL OF CRYSTAL GROWTH.447:36-41(2016)journal articl
We review the nucleation and growth of different Ga2O3 polymorphs with several techniques, giving pr...
In this work a strategy to grow diamond on β-Ga2O3 has been presented. The ζ-potential of the β-Ga2O...
Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐su...
Available online 20 May 2020ArticleJOURNAL OF CRYSTAL GROWTH.545:125724(2020)journal articl
Available online 3 July 202050 mm-diameter Sn-doped beta-Ga2O3 crystals with growth orientation perp...
A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in whi...
The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various...
A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic...
A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic...
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer...
In this paper, we focus on the growth of β- and ε/κ-Ga2O3 thin films via metal–organic vapor phase e...
We present brief overview of our study on the low temperature flux growth of two very important nove...
<p>Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to trad...
The growth of high quality epitaxial beta-gallium oxide (??-Ga2O3) using a compound source by molecu...
Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The tra...
We review the nucleation and growth of different Ga2O3 polymorphs with several techniques, giving pr...
In this work a strategy to grow diamond on β-Ga2O3 has been presented. The ζ-potential of the β-Ga2O...
Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐su...
Available online 20 May 2020ArticleJOURNAL OF CRYSTAL GROWTH.545:125724(2020)journal articl
Available online 3 July 202050 mm-diameter Sn-doped beta-Ga2O3 crystals with growth orientation perp...
A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in whi...
The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various...
A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic...
A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic...
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer...
In this paper, we focus on the growth of β- and ε/κ-Ga2O3 thin films via metal–organic vapor phase e...
We present brief overview of our study on the low temperature flux growth of two very important nove...
<p>Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to trad...
The growth of high quality epitaxial beta-gallium oxide (??-Ga2O3) using a compound source by molecu...
Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The tra...
We review the nucleation and growth of different Ga2O3 polymorphs with several techniques, giving pr...
In this work a strategy to grow diamond on β-Ga2O3 has been presented. The ζ-potential of the β-Ga2O...
Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐su...