Morphologies of metallic inclusions observed in sapphire crystals grown by the vertical Bridgman (VB) technique using a tungsten (W) crucible were investigated. Square- or hexagonal-shaped inclusions 2-5 mu m in size were observed in sapphire crystals around the interface between the seed and the grown crystal. It was found that such inclusions consisted of W metal used for the crucible. The morphology of some of the inclusions reflects a rhombic dodecahedron which is based on the cubic structure of W and is surrounded by {110} faces. It is probable that inclusions form in the sapphire melt during the crystal growth process, and then sink in the melt to the growth interface due to the high density of W. (C) 2013 Elsevier B.V. All rights res...
In spite of the chemical simplicity, the congruent melt behaviour and it’s performed mechanical and ...
We studied the single crystal growth mechanism of sapphire on the basis of chemical bonding calculat...
Ion implantation is a well established and widely used technique to change selectively the near surf...
The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various...
A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in whi...
The turbid/translucent, near colorless (milky) metamorphic sapphire samples from Sri Lanka have been...
The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produ...
The orientation relationship, crystallography and structure of heterointerfaces influence their ener...
Trace-element chemistry and microscopic observations of included gem corundum (α-AlO) suggests a new...
Utilization of sapphire for various applications is significant. Massive crystal growth methods do n...
The solid-state chemistry of inclusions in Al2O3 is of high relevance in several applications, span...
One of the specific defects that affect the optical properties of shaped sapphire crystals obtained ...
Morphology of nonmetallic inclusions depends on their crystallographic structure, the growth conditi...
We have examined the nature of V-defects and inclusions embedded within these defects by atomic forc...
International audienceLayered h-BN were grown on sub-micron size dome patterned sapphire substrates ...
In spite of the chemical simplicity, the congruent melt behaviour and it’s performed mechanical and ...
We studied the single crystal growth mechanism of sapphire on the basis of chemical bonding calculat...
Ion implantation is a well established and widely used technique to change selectively the near surf...
The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various...
A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in whi...
The turbid/translucent, near colorless (milky) metamorphic sapphire samples from Sri Lanka have been...
The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produ...
The orientation relationship, crystallography and structure of heterointerfaces influence their ener...
Trace-element chemistry and microscopic observations of included gem corundum (α-AlO) suggests a new...
Utilization of sapphire for various applications is significant. Massive crystal growth methods do n...
The solid-state chemistry of inclusions in Al2O3 is of high relevance in several applications, span...
One of the specific defects that affect the optical properties of shaped sapphire crystals obtained ...
Morphology of nonmetallic inclusions depends on their crystallographic structure, the growth conditi...
We have examined the nature of V-defects and inclusions embedded within these defects by atomic forc...
International audienceLayered h-BN were grown on sub-micron size dome patterned sapphire substrates ...
In spite of the chemical simplicity, the congruent melt behaviour and it’s performed mechanical and ...
We studied the single crystal growth mechanism of sapphire on the basis of chemical bonding calculat...
Ion implantation is a well established and widely used technique to change selectively the near surf...