The power semiconductor devices control the energy flow in virtually every electric and electronic system. Most common applications are: automotive, traction, consumer electronics, air conditioning, electric engines. The improvement in power devices results in improved power management circuits with increased efficiency. Reduced environmental pollution, reduced cost, reduced size, and longer battery life are only few of the advantages that derive from advancements in the design of power semiconductor devices. Dating from the invention of the transistor, a continuous research and development activity, driven by the huge market request, provided new device concepts, advanced design techniques, and new materials that largely improved the ...
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently propos...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with drift...
The power semiconductor devices control the energy flow in virtually every electric and electronic ...
Superjunction has arguably been the most creative and important concept in the power device field si...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
Power transmission is the transfer of energy from a generating source to a load which uses the energ...
Predictions on limits of silicon in power devices have failed spectacularly in the past, but in spit...
International audienceIn this paper, some high voltage Bipolar Junction Transistors are presented an...
Abstract- In this paper, we have observed that the drift layer of conventional power device can be m...
In this paper, we have observed that the drift layer of conventional power device can be modified to...
grantor: University of TorontoPower semiconductor devices play a crucial role in the effic...
Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superju...
10.1109/PESC.2008.4592533PESC Record - IEEE Annual Power Electronics Specialists Conference3713-3716...
10.1109/IECON.2007.4460230IECON Proceedings (Industrial Electronics Conference)1380-1385IEPR
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently propos...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with drift...
The power semiconductor devices control the energy flow in virtually every electric and electronic ...
Superjunction has arguably been the most creative and important concept in the power device field si...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
Power transmission is the transfer of energy from a generating source to a load which uses the energ...
Predictions on limits of silicon in power devices have failed spectacularly in the past, but in spit...
International audienceIn this paper, some high voltage Bipolar Junction Transistors are presented an...
Abstract- In this paper, we have observed that the drift layer of conventional power device can be m...
In this paper, we have observed that the drift layer of conventional power device can be modified to...
grantor: University of TorontoPower semiconductor devices play a crucial role in the effic...
Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superju...
10.1109/PESC.2008.4592533PESC Record - IEEE Annual Power Electronics Specialists Conference3713-3716...
10.1109/IECON.2007.4460230IECON Proceedings (Industrial Electronics Conference)1380-1385IEPR
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently propos...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with drift...