Characterization of the response of a double side micro-strip silicon detector to X-rays in the diagnostic energy range

The use of a double sided μ-strip silicon crystal for X-ray detection is being investigated. The detector is 300 μm thick and the read-out pitch is 100 μm for both sides. It operates in capacitance charge division mode by means of floating strips between read-out strips. The detector has been irradiated by 241Am and 109Cd sources. Different zones within the 100-μm read-out pitch have been individually exposed. The following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; and (d) the spatial resolution. The absolute efficiency of the detector has been measured at three energy value