ELECTRICAL TRANSPORT PROPERTIES OF MICROCRISTALLINE SILICON GROWN BY PECVD

The dark conductivity and Hall mobility of hydrogenated silicon films deposited varying the silane concentration f=SiH4/(SiH4+H-2) in a conventional plasma enhanced chemical vapor deposition system have been investigated as a function of temperature, taking into account their structural properties. The electrical properties have been studied in terms of a structural two-phase model. A clear transition from the electrical transport governed by a crystalline phase, in the range 1%less than or equal tofless than or equal to3%, to that controlled by an amorphous phase, for f>3%, has been evidenced. Some metastable effects of the dark conductivity have been noticed. (C) 2004 American Institute of Physics