Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

Macchiolo A
Borrello L
Boscardin M
Bruzzi M
Creanza D
Betta GFD
DePalma M
Focardi E
Manna N
Menichelli D
Messineo A
Piemonte C
Radicci V
Ronchin S
Scaringella M
Segneri G
Sentenac D
Zorzi N

Open link

Publication date

January 2007

DOI

10.1016/j.nima.2006.10.244

Publisher

Elsevier BV

ISSN

0168-9002

Citation count (estimate)

Abstract

The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4 x 10(15) 1-MeV n/cm(2). The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the r...