Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, ...
Solid state semiconductor room temperature radiation detectors are important for the Department of H...
The ternary compound Cadmium Zinc Telluride (CdZnTe) is one of the most promising room-temperature s...
ii Electron trapping at second phase Te in CdZnTe (CZT) crystals is presently the limiting factor in...
Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconduc...
The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the s...
The material showing the greatest promise today for production of large-volume gamma-ray spectromete...
Dark currents, including those in the surface and bulk, are the leading source of electronic noise i...
Semiconductor materials have a vast range of applications varying from basic electronic products to ...
In the present work we studied an influence of different types of surface etching and surface passiv...
The quality of a CdZnTe-based X-ray detector is highly related to the interface between semiconducto...
Large-volume cadmium zinc telluride (CZT) radiation detectors would greatly improve radiation detect...
Surface passivation of device-grade radiation detector materials was investigated using x-ray photoe...
CZT material quality improvement has been achieved by optimizing the crystal growth process. N-type ...
CdZnTe crystal is considered to be an excellent material for many applications. It is used for room ...
Cadmium Zinc Telluride (CdZnTe) is a good candidate for detection of x-ray and gamma-rays due to its...
Solid state semiconductor room temperature radiation detectors are important for the Department of H...
The ternary compound Cadmium Zinc Telluride (CdZnTe) is one of the most promising room-temperature s...
ii Electron trapping at second phase Te in CdZnTe (CZT) crystals is presently the limiting factor in...
Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconduc...
The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the s...
The material showing the greatest promise today for production of large-volume gamma-ray spectromete...
Dark currents, including those in the surface and bulk, are the leading source of electronic noise i...
Semiconductor materials have a vast range of applications varying from basic electronic products to ...
In the present work we studied an influence of different types of surface etching and surface passiv...
The quality of a CdZnTe-based X-ray detector is highly related to the interface between semiconducto...
Large-volume cadmium zinc telluride (CZT) radiation detectors would greatly improve radiation detect...
Surface passivation of device-grade radiation detector materials was investigated using x-ray photoe...
CZT material quality improvement has been achieved by optimizing the crystal growth process. N-type ...
CdZnTe crystal is considered to be an excellent material for many applications. It is used for room ...
Cadmium Zinc Telluride (CdZnTe) is a good candidate for detection of x-ray and gamma-rays due to its...
Solid state semiconductor room temperature radiation detectors are important for the Department of H...
The ternary compound Cadmium Zinc Telluride (CdZnTe) is one of the most promising room-temperature s...
ii Electron trapping at second phase Te in CdZnTe (CZT) crystals is presently the limiting factor in...