Changes in the elastic properties of Ge induced by room-temperature irradiation with 3.5-MeV Kr ions have been determined and correlated with changes in the microstructure determined by transmission electron microscopy. Elastic-shear-moduli changes were measured by Brillouin scattering, and changes in local atomic arrangement were determined by Raman scattering. Amorphization decreased the elastic shear modulus of Ge by 17%. The fractional decrease was correlated with the amorphous volume fraction with a cross section of 4.5±0.5 nm2/ion. No change was observed in the shear modulus during void formation and growth. The elastic properties of the voided material are described by the Voigt averaging. However, as the voids evolved into a fibrous...
International audienceA detailed study of the pressure-induced phase transitions in amorphous Ge a-G...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
International audienceThe controlled doping of germanium by ion implantation is a process which requ...
Ge has been irradiated at RT by Ne, Ar, or Kr ions of different energies, and the doses required for...
Swift heavy-ion (SHI) irradiation of amorphous germanium (a-Ge) layers leads to a strong volume expa...
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implan...
Heavy-ion irradiation of crystalline germanium (c-Ge) results in the formation of a homogeneous amor...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Previously we reported a substantial ({approximately}50%) decrease in shear modulus prior to amorphi...
Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with...
One of the key reasons why nanoscale materials behave differently from their bulk counterparts is th...
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with...
The atomic displacement produced by ion irradiation with 150 keV Ar+ ions has been studied in Ge1Sb2...
Swift heavy ion (SHI) irradiation of amorphous Si (a-Si) at non-perpendicular incidence leads to non...
The effect of high electronic energy deposition in amorphous germanium has been studied experimental...
International audienceA detailed study of the pressure-induced phase transitions in amorphous Ge a-G...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
International audienceThe controlled doping of germanium by ion implantation is a process which requ...
Ge has been irradiated at RT by Ne, Ar, or Kr ions of different energies, and the doses required for...
Swift heavy-ion (SHI) irradiation of amorphous germanium (a-Ge) layers leads to a strong volume expa...
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implan...
Heavy-ion irradiation of crystalline germanium (c-Ge) results in the formation of a homogeneous amor...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Previously we reported a substantial ({approximately}50%) decrease in shear modulus prior to amorphi...
Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with...
One of the key reasons why nanoscale materials behave differently from their bulk counterparts is th...
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with...
The atomic displacement produced by ion irradiation with 150 keV Ar+ ions has been studied in Ge1Sb2...
Swift heavy ion (SHI) irradiation of amorphous Si (a-Si) at non-perpendicular incidence leads to non...
The effect of high electronic energy deposition in amorphous germanium has been studied experimental...
International audienceA detailed study of the pressure-induced phase transitions in amorphous Ge a-G...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
International audienceThe controlled doping of germanium by ion implantation is a process which requ...