A great part of interest has been paid for fabricating new materials with novel mechanical, optical, and electrical properties. Boron carbon nitride (BCN) ternary system was applied for variable bandgap semiconductors and systems with extreme hardness. The purpose of this literature review is to provide a brief historical overview of B4C and BN, to review recent research trends in the BCN synthesizes, and to summarize the fabrication of BCN thin films by plasma sputtering technique from B4C and BN targets in different gas atmospheres. Pre-set criteria are used to discuss the processing parameters affecting BCN performance which includes the gasses flow ratio and effect of temperature. Moreover, many characterization studies such as mechanic...
The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the ...
Dimension scaling has been the driving force for improved performance of semiconductor integrated ci...
This paper deals with the successful preparation of cubic boron nitride (c-BN) films by use of an el...
As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems relat...
Research efforts have been focused in the development of hard and wear resistant coatings over the l...
Thin films of boron carbon nitride (BCN) are deposited by co-sputtering of B4C (Direct Current - DC)...
Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target an...
Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target an...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
Boron carbon nitride (BCN) thin films are investigated for their optical properties. BCN, is the una...
The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices ...
In today\u27s technological advancement of ULSI integration, the inter-dielectric layer (IDL) with s...
In the present work, the radio frequency (RF) magnetron sputtering process was used to develop boron...
Investigation of wet chemical etching Boron carbon nitride (BCN) thin films deposited by dual magnet...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the ...
Dimension scaling has been the driving force for improved performance of semiconductor integrated ci...
This paper deals with the successful preparation of cubic boron nitride (c-BN) films by use of an el...
As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems relat...
Research efforts have been focused in the development of hard and wear resistant coatings over the l...
Thin films of boron carbon nitride (BCN) are deposited by co-sputtering of B4C (Direct Current - DC)...
Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target an...
Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target an...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
Boron carbon nitride (BCN) thin films are investigated for their optical properties. BCN, is the una...
The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices ...
In today\u27s technological advancement of ULSI integration, the inter-dielectric layer (IDL) with s...
In the present work, the radio frequency (RF) magnetron sputtering process was used to develop boron...
Investigation of wet chemical etching Boron carbon nitride (BCN) thin films deposited by dual magnet...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the ...
Dimension scaling has been the driving force for improved performance of semiconductor integrated ci...
This paper deals with the successful preparation of cubic boron nitride (c-BN) films by use of an el...