Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in ferromagnetic materials is highly desired but remains challenging. Here, we demonstrate a gate-tunable magnetic anisotropy transition from out-of-pla...
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential...
Although magnetism is one of the oldest branches of solid-state physics, studies of nanomagnetism ar...
A major issue in the development of spintronic memory devices is the reduction of the power consumpt...
© 2019 American Chemical Society.Identifying material parameters affecting properties of ferromagnet...
Identifying material parameters affecting properties of ferromagnets is key to optimized materials t...
Interface engineering is an effective approach to tune the magnetic properties of van der Waals (vdW...
The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extens...
© Copyright © 2020 Chen, Sun, Li, Wang and Wang. The promise of future spintronic devices with nanos...
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks f...
Journals published by the American Physical Society can be found at http://journals.aps.org/The larg...
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential...
We report that by measuring a current-induced hysteresis loop shift versus in-plane bias magnetic fi...
This is the final version. Available from the American Physical Society via the DOI in this record. ...
Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers w...
We present an analysis of the magnetic anisotropy in epitaxial Ga1-xMnxAs thin films through electri...
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential...
Although magnetism is one of the oldest branches of solid-state physics, studies of nanomagnetism ar...
A major issue in the development of spintronic memory devices is the reduction of the power consumpt...
© 2019 American Chemical Society.Identifying material parameters affecting properties of ferromagnet...
Identifying material parameters affecting properties of ferromagnets is key to optimized materials t...
Interface engineering is an effective approach to tune the magnetic properties of van der Waals (vdW...
The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extens...
© Copyright © 2020 Chen, Sun, Li, Wang and Wang. The promise of future spintronic devices with nanos...
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks f...
Journals published by the American Physical Society can be found at http://journals.aps.org/The larg...
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential...
We report that by measuring a current-induced hysteresis loop shift versus in-plane bias magnetic fi...
This is the final version. Available from the American Physical Society via the DOI in this record. ...
Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers w...
We present an analysis of the magnetic anisotropy in epitaxial Ga1-xMnxAs thin films through electri...
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential...
Although magnetism is one of the oldest branches of solid-state physics, studies of nanomagnetism ar...
A major issue in the development of spintronic memory devices is the reduction of the power consumpt...