This paper describes the design of an automated system for low-noise measurement of low-frequency current fluctuations in thin-oxide silicon devices. The aim of these measurements is to study the current tunneling through the oxide, and to investigate its correlation with the oxide breakdown. The dedicated system is realized by integrating a personal computer commercial acquisition board with custom designed low-noise preamplifiers
International audienceA characterization of traps in ultrathin-oxide MOSFETs by low frequency noise ...
We describe a set up for measurements of low frequency (1 mHz < f < 20 Hz) conductance fluctuations...
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The a...
This work presents an automated low noise measurement system purposely designed for the characteriza...
Dielectric breakdown of ultra-thin oxide MOS structures of integrated circuits is preceded by a prec...
none4siIn this work we analyse the applicability of low-frequency (LF) noise measurement in order to...
Theoretical thesis.Bibliography: pages 59-62.1. Introduction -- 2. Noise mechanism -- 3. Noise chara...
In this work we analyse the applicability of low-frequency (LF) noise measurement in order to study ...
Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evalua...
International audienceThe modeling and characterization of low-frequency noise and noise variability...
The potential of using low-frequency noise as a diagnostic tool for semiconductor material and devic...
International audienceLow frequency noise measurements were performed in n-channel UTBOX transistors...
Measurements of low frequency noise in Si and Si0.64Ge0.36 p-channel metal oxide semiconductor field...
Low frequency, 1/f noise measurements on a number of silicon dioxide gate dielectric based commercia...
This workshop provides a comprehensive overview on recent advances in several areas of low-noise osc...
International audienceA characterization of traps in ultrathin-oxide MOSFETs by low frequency noise ...
We describe a set up for measurements of low frequency (1 mHz < f < 20 Hz) conductance fluctuations...
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The a...
This work presents an automated low noise measurement system purposely designed for the characteriza...
Dielectric breakdown of ultra-thin oxide MOS structures of integrated circuits is preceded by a prec...
none4siIn this work we analyse the applicability of low-frequency (LF) noise measurement in order to...
Theoretical thesis.Bibliography: pages 59-62.1. Introduction -- 2. Noise mechanism -- 3. Noise chara...
In this work we analyse the applicability of low-frequency (LF) noise measurement in order to study ...
Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evalua...
International audienceThe modeling and characterization of low-frequency noise and noise variability...
The potential of using low-frequency noise as a diagnostic tool for semiconductor material and devic...
International audienceLow frequency noise measurements were performed in n-channel UTBOX transistors...
Measurements of low frequency noise in Si and Si0.64Ge0.36 p-channel metal oxide semiconductor field...
Low frequency, 1/f noise measurements on a number of silicon dioxide gate dielectric based commercia...
This workshop provides a comprehensive overview on recent advances in several areas of low-noise osc...
International audienceA characterization of traps in ultrathin-oxide MOSFETs by low frequency noise ...
We describe a set up for measurements of low frequency (1 mHz < f < 20 Hz) conductance fluctuations...
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The a...