Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interaction through the effect on the hole $g$-factor. In this work we investigate the role of cubic crystal asymmetry in driving an oscillation in the in-plane hole $g$-factor anisotropy when the quantum point contact is rotated with respect to the crystal axes, and we are able to separate contributions to the Zeeman Hamiltonian arising from Rashba and cubi...
Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynami...
The thesis presents a theoretical study of spin-orbit interaction (SOI) in two-, one- and zero-dimen...
We measure simultaneously the in-plane electron g factor and spin-relaxation rate in a series of und...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-or...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaA...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynami...
The thesis presents a theoretical study of spin-orbit interaction (SOI) in two-, one- and zero-dimen...
We measure simultaneously the in-plane electron g factor and spin-relaxation rate in a series of und...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-or...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaA...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynami...
The thesis presents a theoretical study of spin-orbit interaction (SOI) in two-, one- and zero-dimen...
We measure simultaneously the in-plane electron g factor and spin-relaxation rate in a series of und...