Peer Review_Microstructure And Resistivity Of The Electroplated Ni Aided By The Magnetic Field Parallel To The Electric Field On The Deposition Voltage Variation.

This research has developed Cu/Ni film aided by the magnetic field (B) to investigate the effects of the deposition voltage on the microstructure and sheet resistivity of Ni film. Deposition was carried out with electroplating technique on the voltages that vary from 1.5 V to 7.5 V, while electrolyte temperature of 60C, electrode distance of 4 cm, deposition time of 1 minute. The magnetic field of 200 gauss was installed on the parallel direction to the electric field (E). The results show that the deposition voltages from 1.5 – 4.5 V produce Ni film with thickness directly proportional to the voltage, while on the voltages over 4.5 V the thickness of the film decreases until a half of maximum thickness. Electroplating has also produced the crystal structured Cu/Ni film. The dominant peaks are on the 2 theta angles of approximately 44.18 and 52.38 that correspond to Ni[110] and Ni[111]. The deposition voltage also plays a role in changing the regularity level of the crystal structure both for Ni[110] and Ni[111], also influence the inter-planar distance (d-spacing) for both directions [110] and [111]. From the voltage 1.5 – 4.5 V, the d-spacing profile of Ni [110] and Ni[111] are similar, but on the voltages over 4.5 V, the d-spacing of Ni[100] crystal decreases while Ni[111] increases. In accordance with the grain size, in the voltages from 1.5 – 4.5 V the grain size tends to decrease, but over 4.5 V it tends to increase. The deposition voltages from 1.0 – 7.5 V produce the Ni sheet resistivity (Rs) of approximately between 6.43 – 15.11 μΩ/sq. The highest value of 15.11 μΩ/sq corresponds to the voltage of 3.0 V. The high d-spacing and the small grain size contribute to the high Rs. Mean while, the lowest value of 6.43 μΩ/sq corresponds to the voltage of 6.0 V. The high level regularity of crystal structure, the great d-spacing, and the big grain size contribute to the low Rs