Etch pits could form on an exposed surface of a crystal when the crystal is exposed to an etching environment or chemicals. Due to different dissolution rates along various crystalline directions in a crystal, the dissolution process is anisotropic; hence, etch pits usually have a regular shape. Here, the morphology and origin of the regular-shaped etch pits are discussed firstly; then, factors which could affect the morphology and density of etch pits are shown; finally, the state of the art of etch pit technology and the utilization of etch pits is presented. Traditionally, etch pits are utilized to evaluate the dislocation density and some defect-related properties. Now, in the modern fabrication industries, the relationship between etch...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
It is shown that an etch pit on a crystal may be originated from one of the two causes. The first ca...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
Dislocation configurations in germanium single crystals developed during tensile deformation at 600℃...
Dislocation etch pits on α- or b-face of ferroelectric GASH crystal was studied. Spacial distributio...
An optical study is made of the etch pits produced by hydrofluoric acid on the cleavages of muscovit...
Triangular etch pits on rhombohedral surfaces due to hydrothermal etching are reported. Our experime...
The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produ...
The process of etching and replicating ice surfaces has been investigated. It has been shown that th...
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by ther...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
It is shown that an etch pit on a crystal may be originated from one of the two causes. The first ca...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
Dislocation configurations in germanium single crystals developed during tensile deformation at 600℃...
Dislocation etch pits on α- or b-face of ferroelectric GASH crystal was studied. Spacial distributio...
An optical study is made of the etch pits produced by hydrofluoric acid on the cleavages of muscovit...
Triangular etch pits on rhombohedral surfaces due to hydrothermal etching are reported. Our experime...
The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produ...
The process of etching and replicating ice surfaces has been investigated. It has been shown that th...
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by ther...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...