In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the results of power and efficiency measurements for three different designs of quantum cascade lasers with a record-high peak power in the 8 μm spectral region. The time-resolved QCL spectral study proves that InP-based upper cladding paired with an InP contact layer provides better heat dissipation and allows one to reach better power characteristics in comparison with InGaAs-based contact, even with short pulse pumping
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9$\mu$m are reported. T...
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9µm are reported. Thick...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonst...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Experimental and model results for high power broad area quantum cascade lasers are presented. Conti...
High temperature pulsed operation of quantum cascade lasers is reported. At 425K and 8.4 mu m wavele...
Experimental data for 15-stage 5.6-μm quantum cascade lasers based on Al0.78In0.22As/In0.69Ga0.31As ...
The cascading scheme is a characteristic feature of quantum cascade (QC) lasers. It implies that ele...
5.6μm quantum cascade lasers based on Al0.78In0.22As/In0.69Ga0.31As active region composition with m...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9$\mu$m are reported. T...
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9µm are reported. Thick...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonst...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Experimental and model results for high power broad area quantum cascade lasers are presented. Conti...
High temperature pulsed operation of quantum cascade lasers is reported. At 425K and 8.4 mu m wavele...
Experimental data for 15-stage 5.6-μm quantum cascade lasers based on Al0.78In0.22As/In0.69Ga0.31As ...
The cascading scheme is a characteristic feature of quantum cascade (QC) lasers. It implies that ele...
5.6μm quantum cascade lasers based on Al0.78In0.22As/In0.69Ga0.31As active region composition with m...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...