The Resistive RAM (RRAM) technology is emerging as one of the possible candidates in replacing state-of-the-art NAND Flash for Solid State Drives (SSDs) applications. However, the RRAM architectures developed so far evidence a granularity mismatch between their page size and the typical host application payloads, forcing the use of multi-plane approaches to mimic NAND Flash thus affecting the figures of merit (i.e., bandwidth, latency, and Quality of Service) of a potential "all-RRAM" SSD. In this work we present a RRAM memory system optimization acting both on the internal page size architecture and on the SSD's firmware to find the best configurations able to guarantee the highest performance metrics in enterprise-class SSD applications
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
Existing storage technologies (e.g., disks and flash) are failing to cope with the processor and mai...
Based on the new finding on switching behavior, for the first time a new memory operation principle ...
The continuous request for higher storage density in Solid State Drives (SSD) is pushing the NAND-Fl...
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chi...
The unparalleled cost and form factor advantages of NAND flash memory has driven 35mm photographic f...
Solid-state drives (SSDs) faced an astonishing development in the last few years, becoming the corne...
Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) design...
DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertain...
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability an...
International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, TAIWAN, APR...
c © The Authors 2014. This paper is published with open access at SuperFri.org The memory system is ...
Memory has always been a building block element for information technology. Emerging technologies su...
Performance-hungry data center applications demand increasingly higher performance from their storag...
The memory system is a fundamental performance and energy bottleneck in al-most all computing system...
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
Existing storage technologies (e.g., disks and flash) are failing to cope with the processor and mai...
Based on the new finding on switching behavior, for the first time a new memory operation principle ...
The continuous request for higher storage density in Solid State Drives (SSD) is pushing the NAND-Fl...
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chi...
The unparalleled cost and form factor advantages of NAND flash memory has driven 35mm photographic f...
Solid-state drives (SSDs) faced an astonishing development in the last few years, becoming the corne...
Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) design...
DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertain...
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability an...
International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, TAIWAN, APR...
c © The Authors 2014. This paper is published with open access at SuperFri.org The memory system is ...
Memory has always been a building block element for information technology. Emerging technologies su...
Performance-hungry data center applications demand increasingly higher performance from their storag...
The memory system is a fundamental performance and energy bottleneck in al-most all computing system...
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
Existing storage technologies (e.g., disks and flash) are failing to cope with the processor and mai...
Based on the new finding on switching behavior, for the first time a new memory operation principle ...