A new description of fast charge-trapping effects in GaN FETs
- Bosi, Gianni
- Raffo, Antonio
- Vadala', Valeria
- Vannini, Giorgio
Publication date
January 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A nonlinear multi-bias model oriented to accurately predict the effects of charge-trapping in Gallium Nitride (GaN) HEMTs is proposed. As a case study, we considered a 0.25-μm 8×75-μm GaN HEMT. The model is identified by using CW low-frequency time-domain data and validated through high-frequency vector nonlinear measurements
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