Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives

3D-NAND memories based on Charge Trapping (CT) technology represent the most promising solution for hyperscaled Solid State Drives (SSD). However, the intrinsic low reliability offered by that storage medium leads to a high number of errors requiring an extensive use of complex Error Correction Codes (ECC) and advanced read algorithms such as Read Retry. This materializes in an overall SSD’s Quality of Service (QoS) reduction. In order to limit the errors number, enhanced program algorithms able to improve the reliability figures of CT memories have been introduced. In this work, the impact of such program algorithms combined with Read Retry and ECC is experimentally characterized on CT-NAND arrays. The results are then exploited for co-simulations at system level, assessing reliability, performance and QoS of future SSD integrating CT-based memories