Identification of the optimum operation for GaN HEMTs in high-power amplifiers

In this paper, a technique for the prediction of the optimum performance operation of GaN transistors is described. It is based on a small set of low-frequency measurements to acquire the I/V dynamic behavior of the device and a “partial” model to consider the strictly nonlinear dynamic effects of the device. The technique is applied and validated on a 0.5-8x250-µm2 GaN HEMT at 5.5 GHz