Since pioneering modeling by Schottky and Bardeen, a deep insight into the comprehension of the nature of a semiconductor-metal junction has been addressed. Such knowledge is the base of the working mechanism of gas sensing via chemo-resistive metal oxides. The advent of nanostructures has pursued this study still further due to significant change in the surface parameters with respect to their coarser-grained counterparts. The height of the inter-grain energy barrier plays key role in the determination of the conductive properties of semiconducting nanograins. We firstly approached the calculation of the inter-grain energy barrier for a nano-structured semiconductor under pure classical conditions. A model for Schottky contacts to be appli...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
We developed a model for n-type metal-oxide semiconductors, which allows one to calculate the densit...
This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the e...
The height of the inter-grain energy barrier plays key role in the determination of the conductive...
The surface barrier of metal oxide semiconductors was studied, under spherical symmetry, for grains ...
A semiclassical model for Schottky contacts to be applied to nanosized polycrystalline n-type semic...
A theoretical model has been developed to interpret the size dependent behavior of nanostructured m...
A description of Schottky barrier for n-type semiconductors will be given here and particular attent...
We analyze the electrical conductivity of polycrystalline semiconductor solids due to the presence o...
AbstractWe elaborated a logically closed theory of the conductivity of nano-structured semiconductor...
It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the ...
In the present paper, we discuss a generalized theory of electrical characteristics for amorphous se...
For nanowires with Schottky barriers on the end surfaces, charges on the walls of the wire are close...
For nanowires with Schottky barriers on the end surfaces, charges on the walls of the wire are close...
The conventional Schottky model describes in the mean-field approximation the electrostatic potentia...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
We developed a model for n-type metal-oxide semiconductors, which allows one to calculate the densit...
This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the e...
The height of the inter-grain energy barrier plays key role in the determination of the conductive...
The surface barrier of metal oxide semiconductors was studied, under spherical symmetry, for grains ...
A semiclassical model for Schottky contacts to be applied to nanosized polycrystalline n-type semic...
A theoretical model has been developed to interpret the size dependent behavior of nanostructured m...
A description of Schottky barrier for n-type semiconductors will be given here and particular attent...
We analyze the electrical conductivity of polycrystalline semiconductor solids due to the presence o...
AbstractWe elaborated a logically closed theory of the conductivity of nano-structured semiconductor...
It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the ...
In the present paper, we discuss a generalized theory of electrical characteristics for amorphous se...
For nanowires with Schottky barriers on the end surfaces, charges on the walls of the wire are close...
For nanowires with Schottky barriers on the end surfaces, charges on the walls of the wire are close...
The conventional Schottky model describes in the mean-field approximation the electrostatic potentia...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
We developed a model for n-type metal-oxide semiconductors, which allows one to calculate the densit...
This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the e...