Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention

A deep knowledge of the features and evolution of the nitride storage charge is crucial for reliability, future scalability, and multi-level operation. The purpose of this paper is twofold: 1) to show a combined simulative-experimental technique allowing profiling hole distribution; 2) to monitor through this technique the nitride charge evolution. Interesting correlation will be found between the lateral field in the nitride and the degradation of memory retention after cycling