Experimental study of the response time of GaAs as a photoemitter
- A.V. ALEKSANDROV
- M.S. AVILOV
- R. CALABRESE
- G. CIULLO
- N.S. DIKANSKY
- V. GUIDI
- G. LAMANNA
- P. LENISA
- P.V. LOGACHOV
- A. NOVOKHATSKY
- L. TECCHIO AND B. YANG
Publication date
January 1995
DOI Publisher
American Physical Society (APS) ISSN
1063-651XAbstract
An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps
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