Add to ORKGFilms of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monocrystalline GaAs target.The stoichiometry of the deposited films has been controlled by Rutherford Backscattering (RBS) and Energy Dispersive System (EDS).Conductivity has been measured as a function of the temperature and the density of gap states at the Fermi level was evaluated by Space-Charge-Limited-Currents (SCLC)
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
We investigate the effect of the hydrogen intentional incorporation on the structural properties of ...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...
Films of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monoc...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Films of unhydrogenated amorphous gallium arsenide have been deposited by reactive rf sputtering. Su...
The spectral response of photoconductivity has been measured in samples of amorphous gallium arsenid...
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f....
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f....
Films of unhydrogenated amorphous gallium arsenide have been deposited by reactive rf sputtering. S...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
We investigate the effect of the hydrogen intentional incorporation on the structural properties of ...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...
Films of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monoc...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Films of unhydrogenated amorphous gallium arsenide have been deposited by reactive rf sputtering. Su...
The spectral response of photoconductivity has been measured in samples of amorphous gallium arsenid...
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f....
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f....
Films of unhydrogenated amorphous gallium arsenide have been deposited by reactive rf sputtering. S...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
We investigate the effect of the hydrogen intentional incorporation on the structural properties of ...
The electrical properties of hydrogenated amorphous gallium arsenide prepared by r.f. sputtering hav...