Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is explained and correlated to polarization-field screening. The field-induced ionization of the dopants and its relation with alloy composition in the heterostructure barriers is also analyzed. (C) 2000 American Institute of Physics. [S0003-6951(00)05026-9]
We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantu...
Cataloged from PDF version of article.We present a comparative study on InGaN/GaN quantum zigzag str...
Cataloged from PDF version of article.We report on the electric field dependent carrier dynamics and...
Using self-consistent tight-binding calculations, we show that modulation doping can be used to scre...
The polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched I...
The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum well las...
We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostru...
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nan...
We use a surface integral method to show that the polarization potential in an InGaN/GaN quantum dot...
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of mic...
We present a combined theoretical and experimental analysis to describe the interplay between polari...
Due to changes in the spontaneous and piezoelectric polarization, AlGaN/GaN heterostructures exhibit...
We investigate the degree to which the built-in electric field can be suppressed by employing polari...
GaN/AlGaN quantum wells (QWs) of dominant N polarity with inversion domains (IDs), grown by molecula...
Polarizationeffects have been studied in GaN/AlGaN multiple quantum wells(MQWs) with different c-axi...
We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantu...
Cataloged from PDF version of article.We present a comparative study on InGaN/GaN quantum zigzag str...
Cataloged from PDF version of article.We report on the electric field dependent carrier dynamics and...
Using self-consistent tight-binding calculations, we show that modulation doping can be used to scre...
The polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched I...
The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum well las...
We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostru...
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nan...
We use a surface integral method to show that the polarization potential in an InGaN/GaN quantum dot...
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of mic...
We present a combined theoretical and experimental analysis to describe the interplay between polari...
Due to changes in the spontaneous and piezoelectric polarization, AlGaN/GaN heterostructures exhibit...
We investigate the degree to which the built-in electric field can be suppressed by employing polari...
GaN/AlGaN quantum wells (QWs) of dominant N polarity with inversion domains (IDs), grown by molecula...
Polarizationeffects have been studied in GaN/AlGaN multiple quantum wells(MQWs) with different c-axi...
We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantu...
Cataloged from PDF version of article.We present a comparative study on InGaN/GaN quantum zigzag str...
Cataloged from PDF version of article.We report on the electric field dependent carrier dynamics and...