Low Temperature In-Situ Sequential Chemical Vapor Deposition of Ti:TiN Ultrathin Bilayers for ULSI Barrier Applications

Work by the present investigators has focused on development of Titanium/Titanium Nitride (Ti/TiN) ultrathin (<300 Å) bilayers using a low temperature in-situ sequential chemical vapor deposition process with features designed for compatibility with cluster tool technology for emerging microelectronic applications. The Ti layers were deposited using a single source precursor, titanium tetraiodide (TiI4), in conjunction with a plasma assisted chemical vapor deposition (PA-CVD) in an argon and hydrogen plasma at low power s (0.02-0.16 W/cm2). Alternately, TIN films were deposited from TiI4 in a thermal CVD approach in the presence of ammonia, hydrogen and argon. The use of a single source precursor thus allows the in-situ formation of Ti/TiN bilayers by sequential deposition in a single reactor under a low temperature (