The structural parameters of rare-earth oxides lanthania (La2O3) and ytterbia (YbO), and of transition-metal oxides yttria (Y2O3) and lutetia (Lu2O3), candidate replacements of silica as gate insulators in nanometric Si electronics, are determined via ab initio calculations. The stability against formation of silica, silicides, and silicates for these oxides in contact with silicon is also investigated: we find stability against silica and silicide formation, but not against silicates
Parameters determining the performance of the crystalline oxides zirconia (ZrO2) and hafnia (HfO2) a...
none7Yttria sY2O3d is one of the candidate materials actively studied as a high dielectric constant ...
The paramagnetic electronic structure calculations of the R3Al5O12 (R = Ce-Lu, the rare-earth elemen...
The structural parameters of rare-earth oxides lanthania (La2O3) and ytterbia (YbO), and of transiti...
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
Rare earth oxides are promising candidates for future integration into nano-electronics. A key prope...
Rare earth oxides are promising candidates for future integration into nano-electronics. A key prope...
The properties of rare-earth and transition metal oxides of interest for the development of future s...
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits ...
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated c...
We study from first principles the stability of neutral and charged oxygen vacancies in lutetium oxy...
Rare-earth oxides are among the materials which are presently studied as possible replacements of am...
Using density functional theory, we investigated the position preference and diffusion mechanisms of...
A number of binary oxides have been predicted to be thermodynamically stable in contact with Si and ...
Parameters determining the performance of the crystalline oxides zirconia (ZrO2) and hafnia (HfO2) a...
none7Yttria sY2O3d is one of the candidate materials actively studied as a high dielectric constant ...
The paramagnetic electronic structure calculations of the R3Al5O12 (R = Ce-Lu, the rare-earth elemen...
The structural parameters of rare-earth oxides lanthania (La2O3) and ytterbia (YbO), and of transiti...
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
Rare earth oxides are promising candidates for future integration into nano-electronics. A key prope...
Rare earth oxides are promising candidates for future integration into nano-electronics. A key prope...
The properties of rare-earth and transition metal oxides of interest for the development of future s...
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits ...
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated c...
We study from first principles the stability of neutral and charged oxygen vacancies in lutetium oxy...
Rare-earth oxides are among the materials which are presently studied as possible replacements of am...
Using density functional theory, we investigated the position preference and diffusion mechanisms of...
A number of binary oxides have been predicted to be thermodynamically stable in contact with Si and ...
Parameters determining the performance of the crystalline oxides zirconia (ZrO2) and hafnia (HfO2) a...
none7Yttria sY2O3d is one of the candidate materials actively studied as a high dielectric constant ...
The paramagnetic electronic structure calculations of the R3Al5O12 (R = Ce-Lu, the rare-earth elemen...