The use of thin films of amorphous silicon and amorphous silicon carbide as active materials drives to innovative families of photodiodes with excellent sensitivity in the extreme UV spectral range and quasitransparent to the visible radiation. In the present devices, quantity efficiency (QE) values of 21% and 0.08% have been measured at 120 and 750 nm, respectively, demonstrating also an excellent selectivity
In this work, we present a new amorphous silicon balanced photodiode, which takes advantage of the d...
A novel photodetector based on a p-i-n amorphous silicon/n-p crystalline silicon stacked heterostruc...
Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been wide...
A new family of photodetectors based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide ...
In this paper we report about thin film photodetectors optimized for the detection of the vacuum ult...
Topic M, Stiebig H, Krause M, Wagner H. Adjustable ultraviolet-sensitive detectors based on amorphou...
We report on thin-film photodetectors optimized for detecting the vacuum UV and rejection of the vis...
Thin-film detectors made of hydrogenated amorphous silicon (LI-Si:H) and amorphous silicon carbide (...
Krause M, Topic M, Stiebig H, Wagner H. Thin-film UV detectors based on hydrogenated amorphous silic...
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with dif...
In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure...
We present a study of the behavior under illumination of an ultraviolet detector based on a hydrogen...
In this paper, we present a detailed investigation of an amorphous silicon sensor for the detection ...
Abstract A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity...
In this work we present the design and fabrication of a 16 x 16 ultraviolet sensor array, deposited ...
In this work, we present a new amorphous silicon balanced photodiode, which takes advantage of the d...
A novel photodetector based on a p-i-n amorphous silicon/n-p crystalline silicon stacked heterostruc...
Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been wide...
A new family of photodetectors based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide ...
In this paper we report about thin film photodetectors optimized for the detection of the vacuum ult...
Topic M, Stiebig H, Krause M, Wagner H. Adjustable ultraviolet-sensitive detectors based on amorphou...
We report on thin-film photodetectors optimized for detecting the vacuum UV and rejection of the vis...
Thin-film detectors made of hydrogenated amorphous silicon (LI-Si:H) and amorphous silicon carbide (...
Krause M, Topic M, Stiebig H, Wagner H. Thin-film UV detectors based on hydrogenated amorphous silic...
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with dif...
In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure...
We present a study of the behavior under illumination of an ultraviolet detector based on a hydrogen...
In this paper, we present a detailed investigation of an amorphous silicon sensor for the detection ...
Abstract A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity...
In this work we present the design and fabrication of a 16 x 16 ultraviolet sensor array, deposited ...
In this work, we present a new amorphous silicon balanced photodiode, which takes advantage of the d...
A novel photodetector based on a p-i-n amorphous silicon/n-p crystalline silicon stacked heterostruc...
Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been wide...