Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas
- A. D., Gaspare
- R., Casini
- ORTOLANI, MICHELE
- E., Giovine
- V., Foglietti
- P., Romanini
- D., Dominijanni
- M., Peroni
- F., Evangelisti
Publication date
January 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared. © 2011 IEEE
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