Impact of technology scaling on leakage power in nano-scale bulk CMOS digital standard cells

Leakage estimation is an important step in nano-scale technology digital design flows. While reliable data exist on leakage trends with bulk CMOS technology scaling in stand-alone devices and circuits, there is a lack of public domain results on the effect of scaling on leakage power consumption for a complete standard cell set. We present an analysis on a standard cell library applying a logic-level estimation model, supported by SPICE BSIM4 comparison. The logic-level model speedup over SPICE is > 10(3) with average accuracy below 1% error. We therefore explore the effects of scaling on the whole standard cell set with respect to different leakage mechanisms (sub-threshold, body, gate) and to input pattern dependence. While body leakage appears to be dominant, sub-threshold leakage is expected to increase more than other components with scaling. Detailed data of the whole analysis are reported for use in further research on leakage aware digital design. (C) 2013 Elsevier Ltd. All rights reserved