Epitaxial-like Growth of Co3O4/ZnO Quasi-1D Nanocomposites

The development of quasi-1D Co3O4/ZnO nanocomposites by a two-step plasma enhanced-chemical vapor deposition (PE-CVD) process is presented. Arrays of oriented ZnO nanorods were first grown on Si(100) and subsequently used as templates for the PE-CVD of Co3O4, whose amount was tailored as a function of deposition time. The obtained composites were thoroughly characterized by means of a multitechnique approach, involving field emission-scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDXS), micro-Raman and Fourier-transform infrared (FT-IR) spectroscopies, X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), glancing incidence X-ray diffraction (GIXRD), and reflection high energy electron diffraction (RHEED). The use of moderate deposition temperatures (<= 300 degrees C), together with the unique activation provided by nonequilibrium plasmas, prevented state reactions between the two oxides and promoted Co3O4 growth on the tips of vertically aligned ZnO nanostructures. In particular, the resulting quasi-1D Co3O4/ZnO composites were characterized by an interface epitaxial-like relationship, an important issue for the development of semiconductor-based functional nanosystems. Photoinduced hydrophilic (PH) and photocatalytic (PC) performances of the present nanocomposites were preliminarily investigated, showing attractive results toward the possible fabrication of advanced smart materials