A short report is given on the technique of photoelectrochemical etching. The basic principles and the existing literature on photoetching are reviewed. It appears that this technique has a number of applications in semiconductor characterization, in optics, in electronic devices fabrication and in solar energy conversion devices. Special attention is devoted to the photoelectrochemical etching processes of III-V compound semiconductors and experimental results of the etching of InP are reported. The micro-reliefs obtained on InP by photoetching are described and possible applications are discussed
After a short general description of the chemical etching of semiconductors the mechanisms of defect...
A process for the surface treatment of photosensitive compound semiconductors comprises an electroly...
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edg...
A short report is given on the technique of photoelectrochemical etching. The basic principles and t...
The mechan ism of the photoelectrochemical etching (photoetching) of CdSe was investigated. The prod...
Photoelectrochemistry may be performed on semiconductor wafers without application of metal contacts...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
NoThe objective of this review is to provide an overview concerning what the authors believe to be t...
The surface morphology of (100) n-InP samples photoelectrochemically etched in homogeneous white lig...
Photoelectrochemical etching can be a tech-nique for producing microstructures in semi-conductors wi...
Photolithography and etching form the basis of any microfabrication process. Consequently, there is ...
The photoelectrochemical oxidation of(i00), (I 11), and (i 11) n-InP and n-GaAs in several cidic sol...
A study of photoelectrochemical etching of A1GaAs/GaAs multilayers under conditions of constant pote...
Available from TIB Hannover: F96B320 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische I...
After a short general description of the chemical etching of semiconductors the mechanisms of defect...
A process for the surface treatment of photosensitive compound semiconductors comprises an electroly...
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edg...
A short report is given on the technique of photoelectrochemical etching. The basic principles and t...
The mechan ism of the photoelectrochemical etching (photoetching) of CdSe was investigated. The prod...
Photoelectrochemistry may be performed on semiconductor wafers without application of metal contacts...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
NoThe objective of this review is to provide an overview concerning what the authors believe to be t...
The surface morphology of (100) n-InP samples photoelectrochemically etched in homogeneous white lig...
Photoelectrochemical etching can be a tech-nique for producing microstructures in semi-conductors wi...
Photolithography and etching form the basis of any microfabrication process. Consequently, there is ...
The photoelectrochemical oxidation of(i00), (I 11), and (i 11) n-InP and n-GaAs in several cidic sol...
A study of photoelectrochemical etching of A1GaAs/GaAs multilayers under conditions of constant pote...
Available from TIB Hannover: F96B320 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische I...
After a short general description of the chemical etching of semiconductors the mechanisms of defect...
A process for the surface treatment of photosensitive compound semiconductors comprises an electroly...
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edg...