GaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power P opt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS) epitaxial layer structure diminishes power saturation of high-power bars at high driving current. The resulting ETAS bars with 4 mm cavity produce a record 1.9 kW peak power, limited by available current supply, with a maximum power conversion efficiency η E = 67% at T HS = 25 °C heat-sink temperature. Both P opt and η E have been increased further by operating the bars at T HS = −70 °C. Sub-zero operation raises the P opt to 2.3 kW and the maximum η E to 74%. A second configuration of ETAS bars with optimized lateral layout is further realize...
High peak power and brightness eye-safe lasers are desired in automotive LIDAR, for example. We addr...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quan...
Progress in epitaxial design is shown to enable increased optical output power P opt and power conve...
We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-a...
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion effi...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Broad-area diode lasers with increased brightness and efficiency are presented, which are fabricated...
Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wave...
Abstract Design considerations for high pulsed power and brightness 1.5 μm laser emitters for laser...
Abstract—A new laser design for single-mode high-power appli-cations is reported. The waveguide is a...
We report on the design and fabrication of high performance 800-1000 nm high power lasers using an a...
We report first experimental results on a high-power pulsed semiconductor laser operating in the eye...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Semiconductor lasers with emission in the range 790 - 880 nm are in use for a variety of application...
High peak power and brightness eye-safe lasers are desired in automotive LIDAR, for example. We addr...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quan...
Progress in epitaxial design is shown to enable increased optical output power P opt and power conve...
We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-a...
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion effi...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Broad-area diode lasers with increased brightness and efficiency are presented, which are fabricated...
Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wave...
Abstract Design considerations for high pulsed power and brightness 1.5 μm laser emitters for laser...
Abstract—A new laser design for single-mode high-power appli-cations is reported. The waveguide is a...
We report on the design and fabrication of high performance 800-1000 nm high power lasers using an a...
We report first experimental results on a high-power pulsed semiconductor laser operating in the eye...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Semiconductor lasers with emission in the range 790 - 880 nm are in use for a variety of application...
High peak power and brightness eye-safe lasers are desired in automotive LIDAR, for example. We addr...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quan...