A combined study of the optical and structural properties of AlGaAs∕GaAs quantum wells is presented. Microphotoluminescence experiments, magnetomicrophotoluminescence, and atomically resolved cross-sectional scanning tunneling microscopy were performed on the same quantum well sample. Constant-current topographs with aluminum and/or gallium sensitivity are used to directly extract disorder potentials. Using these potentials, exciton absorption spectra, microphotoluminescence spectra, and diamagnetic shifts of individual exciton states are calculated in an envelope function approximation. Very good agreement between the theoretical and experimental results is found
In this work we analyze the relation between the interface microroughness and the full width at half...
A correlation between the diamagnetic shift and transition energy of disorder-localized excitons is ...
We report optical studies of high-quality 1.3 mu m strain-compensated GaInNAs/GaAs single-quantum-we...
A combined study of the optical and structural properties of AlGaAs/GaAs quantum wells is presented....
This thesis discusses carrier dynamics of III-V semiconductor quantum well structures probed by phot...
We have studied the optical properties of GaAs1 - xPx/Ga0.65 Al0.35 As quantum wells as a function o...
Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole s...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
A series of doped GaAs/AlGaAs single quantum well samples has been investigated using photoluminesce...
Contains fulltext : 29720.pdf (publisher's version ) (Open Access
The results of an investigation of the energy spectrum of two-dimensional hole systems in GaAs/(AI,G...
The emission properties of (AlxGa1-x)0.48In0.52As/Ga0.47In0.53As quantum wells grown lattice-matched...
Interband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE hav...
Photoluminescence and photoluminescence excitation spectroscopy on Ga0.47In0.53As multi quantum well...
The aim of this work is the study of photoluminescence properties of GaAs/Al0.33Ga0.67As double quan...
In this work we analyze the relation between the interface microroughness and the full width at half...
A correlation between the diamagnetic shift and transition energy of disorder-localized excitons is ...
We report optical studies of high-quality 1.3 mu m strain-compensated GaInNAs/GaAs single-quantum-we...
A combined study of the optical and structural properties of AlGaAs/GaAs quantum wells is presented....
This thesis discusses carrier dynamics of III-V semiconductor quantum well structures probed by phot...
We have studied the optical properties of GaAs1 - xPx/Ga0.65 Al0.35 As quantum wells as a function o...
Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole s...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
A series of doped GaAs/AlGaAs single quantum well samples has been investigated using photoluminesce...
Contains fulltext : 29720.pdf (publisher's version ) (Open Access
The results of an investigation of the energy spectrum of two-dimensional hole systems in GaAs/(AI,G...
The emission properties of (AlxGa1-x)0.48In0.52As/Ga0.47In0.53As quantum wells grown lattice-matched...
Interband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE hav...
Photoluminescence and photoluminescence excitation spectroscopy on Ga0.47In0.53As multi quantum well...
The aim of this work is the study of photoluminescence properties of GaAs/Al0.33Ga0.67As double quan...
In this work we analyze the relation between the interface microroughness and the full width at half...
A correlation between the diamagnetic shift and transition energy of disorder-localized excitons is ...
We report optical studies of high-quality 1.3 mu m strain-compensated GaInNAs/GaAs single-quantum-we...