Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integration into final devices. Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to deteriorate the 2DMs' properties. Here, t-SPL is used for the fabrication of MoS2-based field effect transistors (FETs). In particular, the use of t-SPL is demonstrated for the first time for the fabrication of edge-contact MoS2 FETs, combining the hot-tip patterning and Ar+ milling to etch the 2DM. To avoid contamination of the contact interface by atmospheric gas molecules, etching and metal deposition are performed without breaking the vacuum conditions in between. With this process, edge-contact MoS2 FETs are successfully fabricated and characterized. On/off ratios up to 108 and 109 are obtained at room temperature in air and vacuum, respectively, i.e., comparable with the best values reported in the literature.The authors thank the Center of Micro/Nanotechnology (CMi) of EPFL. We also thank Sadegh Kamaei, Teodor Rosca, and Prof. A. M. Ionescu for their help with the electrical measurement set-up and access to their instruments. This work received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 Research and Innovation Program (Project “MEMS 4.0”, ERC-2016-ADG, grant agreement no. 742685).With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewe