Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC–DC power converters

A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong capacitive nonlinearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. A detailed analysis on how to obtain this electrical characteristic is included in this study. Finally, the high accuracy of the model is validated with experimental measurements in a double-pulse buck converter setup by using commercial SJ MOSFET, as well as advanced device prototypes under development.This work was supported by the Asturian Gobernment through the grant Beca Predoctoral “Severo Ochoa” BP14–140. This work was also supported by the project E2 SG, cofunded by grants from Belgium, Italy, Austria, Germany, Spain, The Netherlands, Portugal, Slovakia, The U.K., and the ECSEL