In conductive materials and semiconductors, a charge carrier under the effects of an electric field will suffer collisions due to thermal fluctuations and impurities in the lattice, altering their trajectory. The electronic properties of these materials depend on the nature and frequency of these collisions; thus, they must be accounted for in any model dealing with electrical conduction. Tracking all collisions individually, while it may be possible within certain limits, forces the model to a large degree of approximation. This work introduces a Monte Carlo-based methodology to electrical transport in Ohmic materials that consists of two parts, the utilization of probability distribution functions (PDFs) for a set of collisions (coarse gr...
We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InA...
We present the results of Monte Carlo simulations of transport of charge carriers of a single type i...
Abstract. Enhanced functional integration in modern electron devices requires an accurate modeling o...
This thesis is focused on on using Monte Carlo simulation to extract device relevant properties, suc...
We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to...
Within the context of higher education for science or engineering undergraduates, we present an inqu...
This thesis is focused on the study of charge transport in semiconductors. Monte Carlo simulation is...
A sound physical model for electric conduction in Ovonic materials is presented. Trap-limited condu...
Chalcogenide $mathrm{Ge_2Sb_2Te_5}$ material (GST) can suitably be exploited for manufacturing phase...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
This analysis applies to a quasi-neutral region of uniformly doped semiconductor material. The objec...
We present a computational approach to model hole transport in an amorphous semiconducting fluorene-...
International audienceConduction models in disordered materials are described, with a special focus ...
Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential ...
We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InA...
We present the results of Monte Carlo simulations of transport of charge carriers of a single type i...
Abstract. Enhanced functional integration in modern electron devices requires an accurate modeling o...
This thesis is focused on on using Monte Carlo simulation to extract device relevant properties, suc...
We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to...
Within the context of higher education for science or engineering undergraduates, we present an inqu...
This thesis is focused on the study of charge transport in semiconductors. Monte Carlo simulation is...
A sound physical model for electric conduction in Ovonic materials is presented. Trap-limited condu...
Chalcogenide $mathrm{Ge_2Sb_2Te_5}$ material (GST) can suitably be exploited for manufacturing phase...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
This analysis applies to a quasi-neutral region of uniformly doped semiconductor material. The objec...
We present a computational approach to model hole transport in an amorphous semiconducting fluorene-...
International audienceConduction models in disordered materials are described, with a special focus ...
Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential ...
We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InA...
We present the results of Monte Carlo simulations of transport of charge carriers of a single type i...
Abstract. Enhanced functional integration in modern electron devices requires an accurate modeling o...