Towards a New Generation of Monolithic Active Pixel Sensors

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higherdensities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes.MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow forsignificant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor andthe absence of a separate readout chip.The TANGERINE project develops a sensor suitable for future Higgs factories as well as sensor in a beam telescope for beam-testfacilities. The sensors will have small collection electrodes (order of μm), to maximize the signal-to-noise ratio, which allows tominimize power dissipation in the circuitry. The first batch of test chips, featuring full front-end amplifiers with Krummenacherfeedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an electron beam withcurrents up to 100 μA and an energy of 855 MeV. The analog output signal of the test chips was recorded with a high bandwidthoscilloscope and used to study the charge-sensitive amplifier of the chips in terms of waveform analysis. A beam telescope wasused as a reference system, to allow for track-based analysis of the recorded data