International audienceExtended defects formed as a result of heated implantation and thermal annealing are studied using transmission electron microscopy and kinetic Monte Carlo simulations. We highlight the relevance of using kinetic Monte Carlo approach to provide information to continuum-scale simulations as well as the value of integrating data from atomic-scale calculations for its calibration
A physically motivated model that accounts for the spatial and temporal evolution of extended defect...
[[abstract]]Ion implantation is the key processing step in the production of integrated circuits. Ho...
With full knowledge of a material’s atomistic structure, it is possible to predict any macroscopic p...
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implan...
Microstructure evolution of irradiated materials is a complex phenomenon that involves time and leng...
Atomistic modeling has been applied in studying and simulating the advanced junction technologies. W...
The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate the complex proc...
Producción CientíficaPulsed laser irradiation of damaged solids promotes ultrafast nonequilibrium ki...
TEM image simulations are used to couple the results from molecular dynamics (MD) simulations to exp...
International audienceA model for the emission of point defects by point defect sinks is proposed fo...
In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and simulate the d...
Phenomena such as solute strengthening in alloys as well as embrittlement of bimaterial interfaces a...
We review the development and application of kinetic Monte Carlo simulations to investigate defect a...
The ageing of pressure vessel steels under radiation has been correlated with the formation of more ...
We present an atomistic approach to the development of predictive process simulation tools. First pr...
A physically motivated model that accounts for the spatial and temporal evolution of extended defect...
[[abstract]]Ion implantation is the key processing step in the production of integrated circuits. Ho...
With full knowledge of a material’s atomistic structure, it is possible to predict any macroscopic p...
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implan...
Microstructure evolution of irradiated materials is a complex phenomenon that involves time and leng...
Atomistic modeling has been applied in studying and simulating the advanced junction technologies. W...
The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate the complex proc...
Producción CientíficaPulsed laser irradiation of damaged solids promotes ultrafast nonequilibrium ki...
TEM image simulations are used to couple the results from molecular dynamics (MD) simulations to exp...
International audienceA model for the emission of point defects by point defect sinks is proposed fo...
In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and simulate the d...
Phenomena such as solute strengthening in alloys as well as embrittlement of bimaterial interfaces a...
We review the development and application of kinetic Monte Carlo simulations to investigate defect a...
The ageing of pressure vessel steels under radiation has been correlated with the formation of more ...
We present an atomistic approach to the development of predictive process simulation tools. First pr...
A physically motivated model that accounts for the spatial and temporal evolution of extended defect...
[[abstract]]Ion implantation is the key processing step in the production of integrated circuits. Ho...
With full knowledge of a material’s atomistic structure, it is possible to predict any macroscopic p...