We present surface-differential-reflectivity results on the oxidation of InP(110) surfaces in the energy range between 2.0 and 4.0 eV. Absorption kinetics is analyzed by following the reflectivity variation between 1 x 10(2) and 2 x 10(6) langmuirs of molecular oxygen at three selected spectral energies. Several well-defined steps of the oxidation process are clearly resolved and discussed in terms of the disappearance of intrinsic surface states, the creation of acceptor and donor defect states, and the growth of In2O3
We studied the dissociation of molecular oxygen adsorbed on Ag(110) by electron-energy-loss spectros...
Surface differential reflectivity measurements have been carried out for a cleaved CdTe(110) surface...
As part of an extensive project on the surface electronic structure of semiconductor compounds we re...
We present surface differential reflectivity (SDR) results on the polarization dependence of optical...
Semiconductors designated for solar water-splitting need to be simultaneously stable and efficient i...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Semiconductors designated for solar water-splitting need to be simultaneously stable and efficient i...
A theoretical study of the oxidation of InP(001)-(2 × 4) surface is performed using density function...
Semiconductors designated for solar water splitting need to be simultaneously stable and efficient i...
The chemisorption of oxygen on Ir(100) has been investigated under ultrahigh vacuum conditions with ...
Factors determining etching and passivation of n-type InP in H2SO4 and HCl solution and the correspo...
Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's dire...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
The influence of different wet chemical treatments (HCl, H2SO4, NH4OH) on the composition of InP sur...
The thermal oxidation process for InP results in a complex and process dependent oxide. From the obs...
We studied the dissociation of molecular oxygen adsorbed on Ag(110) by electron-energy-loss spectros...
Surface differential reflectivity measurements have been carried out for a cleaved CdTe(110) surface...
As part of an extensive project on the surface electronic structure of semiconductor compounds we re...
We present surface differential reflectivity (SDR) results on the polarization dependence of optical...
Semiconductors designated for solar water-splitting need to be simultaneously stable and efficient i...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Semiconductors designated for solar water-splitting need to be simultaneously stable and efficient i...
A theoretical study of the oxidation of InP(001)-(2 × 4) surface is performed using density function...
Semiconductors designated for solar water splitting need to be simultaneously stable and efficient i...
The chemisorption of oxygen on Ir(100) has been investigated under ultrahigh vacuum conditions with ...
Factors determining etching and passivation of n-type InP in H2SO4 and HCl solution and the correspo...
Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's dire...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
The influence of different wet chemical treatments (HCl, H2SO4, NH4OH) on the composition of InP sur...
The thermal oxidation process for InP results in a complex and process dependent oxide. From the obs...
We studied the dissociation of molecular oxygen adsorbed on Ag(110) by electron-energy-loss spectros...
Surface differential reflectivity measurements have been carried out for a cleaved CdTe(110) surface...
As part of an extensive project on the surface electronic structure of semiconductor compounds we re...